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更多>>HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000
來(lái)源：http://www.wftv100.com 作者：康華爾電子 2022年07月28
DIODES百利通亞陶晶振所生產(chǎn)的石英晶振,貼片晶振,石英晶體振蕩器,壓電石英晶體元器件、壓電石英晶體、有源晶體廣泛應(yīng)用于智能設(shè)備,汽車電子,無(wú)線通訊,網(wǎng)絡(luò)通信,精密儀器,GPS衛(wèi)星,網(wǎng)絡(luò)控制器,全球GPS定位系統(tǒng)等領(lǐng)域.工程、銷售、倉(cāng)儲(chǔ)和物流辦事處設(shè)在臺(tái)北,香港、曼徹斯特、上海、深圳、中國(guó)、韓國(guó)、慕尼黑、德國(guó)、以及世界各地的支持辦事處.
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
我們的有源晶體振蕩器 (CXO) 提供高價(jià)值、卓越的性能和功能以及卓越的品質(zhì)和服務(wù)。我們?yōu)榕可a(chǎn)提供快速周轉(zhuǎn)樣品、響應(yīng)式技術(shù)支持和快速交貨時(shí)間。
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
| FNETHE025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| FNETHE025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| FNETHE025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| FNSURV027 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm |
| FNSURV027 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm |
| FNSURV027 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm |
| FNGEPO002 | 亞陶石英晶振 | SaRonix-eCera™ ASSP XO™ | 2.048MHz | ±50ppm |
| FNGEPO002 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 2.048MHz | ±50ppm |
| FNGEPO002 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 2.048MHz | ±50ppm |
| FKSSD1025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| FKSSD1025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| FKSSD1025 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 25MHz | ±25ppm |
| UJWIFI026 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 26MHz | ±20ppm |
| UJWIFI026 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 26MHz | ±20ppm |
| UJWIFI026 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 26MHz | ±20ppm |
| FNEPON125 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 125MHz | ±50ppm |
| FNEPON125 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 125MHz | ±50ppm |
| FNEPON125 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 125MHz | ±50ppm |
| FK1330001Z | Diodes Incorporated | SaRonix-eCera™ FK | 13.3333MHz | ±25ppm |
| FK1330001Z | Diodes Incorporated | SaRonix-eCera™ FK | 13.3333MHz | ±25ppm |
| FK1330001Z | Diodes Incorporated | SaRonix-eCera™ FK | 13.3333MHz | ±25ppm |
| FJ2400011 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
| FJ2400011 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
| FJ2400011 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
提供多種類型和特性：
1) 尺寸從 7x5mm 到 2.0x1.6mm，
2) 傳統(tǒng) CXO 的溫度穩(wěn)定性為 ±5PPM，
3) CMOS/TTL、LVPECL、LVDS、HCSL差分晶振的輸出邏輯格式，和慢性粒細(xì)胞白血病。
我們的 CXO 被領(lǐng)先制造商用于各種要求苛刻的應(yīng)用，從消費(fèi)類到工業(yè)、汽車 (AEC-Q200/AEC-Q104)、網(wǎng)絡(luò)、存儲(chǔ)、計(jì)算、電信等。
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
HX251 XO 系列是高性能CMOS輸出振蕩器系列，支持高溫且抖動(dòng)性能極低，小體積晶振尺寸2.5x2.0mm四腳貼片晶振、高溫CMOS晶體振蕩器，它支持各種選項(xiàng)，包括更寬的頻率范圍、1.8V/2.5V/3.3V 電壓以及在寬溫度范圍內(nèi)的各種穩(wěn)定性。它旨在滿足通信系統(tǒng)、工業(yè)應(yīng)用和其他高性能設(shè)備的時(shí)鐘源規(guī)范。
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
| FJ2400002 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
| FJ2400002 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
| FJ2400002 | Diodes Incorporated | SaRonix-eCera™ FJ | 24MHz | ±50ppm |
| FN2500149 | Diodes Incorporated | SaRonix-eCera™ FN | 25MHz | ±50ppm |
| FN2500149 | Diodes Incorporated | SaRonix-eCera™ FN | 25MHz | ±50ppm |
| FN2500149 | Diodes Incorporated | SaRonix-eCera™ FN | 25MHz | ±50ppm |
| SXGPON155 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 155.52MHz | ±50ppm |
| SXGPON155 | Diodes Incorporated | SaRonix-eCera™ ASSP XO™ | 155.52MHz | ±50ppm |
| SXGPON155 | 亞陶晶體振蕩器 | SaRonix-eCera™ ASSP XO™ | 155.52MHz | ±50ppm |
| HX2513F0026.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 26MHz | ±50ppm |
| HX2513F0026.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 26MHz | ±50ppm |
| HX2513F0026.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 26MHz | ±50ppm |
| HX3125006Q | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±30ppm |
| HX3125006Q | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±30ppm |
| HX3125006Q | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±30ppm |
| NX3211C0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±50ppm |
| NX3211C0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±50ppm |
| NX3211C0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±50ppm |
| FJ1600002 | Diodes Incorporated | SaRonix-eCera™ FJ | 16MHz | ±50ppm |
| FJ1600002 | Diodes Incorporated | SaRonix-eCera™ FJ | 16MHz | ±50ppm |
| FJ1600002 | Diodes Incorporated | SaRonix-eCera™ FJ | 16MHz | ±50ppm |
| JX7011D0070.656000 | Diodes Incorporated | SaRonix-eCera™ JX | 70.656MHz | ±25ppm |
| JX7011D0070.656000 | Diodes Incorporated | SaRonix-eCera™ JX | 70.656MHz | ±25ppm |
| JX7011D0070.656000 | Diodes Incorporated | SaRonix-eCera™ JX | 70.656MHz | ±25ppm |
| UJ2600007Z | Diodes Incorporated | SaRonix-eCera™ UJ | 26MHz | ±20ppm |
特征：
支持高達(dá)125ºC的高溫
低相位抖動(dòng) - < 1ps RMS 最大值。
寬頻率范圍 - 1.75 ~ 161MHz
更厚的晶體以提高可靠性
低電源電流 - 最大 40mA。
無(wú)鉛且符合 RoHS 標(biāo)準(zhǔn)
應(yīng)用：
網(wǎng)絡(luò)系統(tǒng)
工業(yè)系統(tǒng)
專業(yè)視頻設(shè)備
測(cè)試和測(cè)量
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
HX251系列是高性能CMOS輸出振蕩器,HX2513A0024.000000,HX2513F0026.000000,耐高溫晶振
| UJ2600007Z | Diodes Incorporated | SaRonix-eCera™ UJ | 26MHz | ±20ppm |
| UJ2600007Z | Diodes Incorporated | SaRonix-eCera™ UJ | 26MHz | ±20ppm |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm |
| FJ1120001Z | Diodes Incorporated | SaRonix-eCera™ FJ | 11.2896MHz | ±25ppm |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm |
| FDC500026 | Diodes Incorporated | SaRonix-eCera™ FD | 125MHz | ±50ppm |
| HX7011C0025.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±25ppm |
| HX7011C0025.000000 | Diodes Incorporated | SaRonix-eCera™ HX | 25MHz | ±25ppm |
| HX7011C0025.000000 | 百利通亞陶有源晶振 | SaRonix-eCera™ HX | 25MHz | ±25ppm |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX5011B0125.000000 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm |
| FNA000088Z | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±50ppm |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm |
| FNA000065 | Diodes Incorporated | SaRonix-eCera™ FN | 100MHz | ±25ppm |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| NX71C50003 | Diodes Incorporated | SaRonix-eCera™ NX | 125MHz | ±25ppm |
| FNC500131 | Diodes Incorporated | SaRonix-eCera™ FN | 125MHz | ±50ppm |
| FNC500131 | Diodes Incorporated | SaRonix-eCera™ FN | 125MHz | ±50ppm |
| HX201 | 標(biāo)準(zhǔn) | 25 ~ 100 | 2.0 x 1.6 x 0.75 | CMOS | 3.32.51.8 | 4 | - | 1.8V/2.5V/3.3V、2.0x1.6mm、高溫CMOS晶體振蕩器 | |
|---|---|---|---|---|---|---|---|---|---|
| HX251 | 標(biāo)準(zhǔn) | 25 ~ 100 | 2.5 x 2.0 x 0.9 | CMOS | 3.32.51.8 | 4 | - | 1.8V/2.5V/3.3V、2.5x2.0mm、耐高溫晶振CMOS晶體振蕩器 | |
| HX321 | 標(biāo)準(zhǔn) | 25 ~ 100 | 3.2 x 2.5 x 1.0 | CMOS | 3.32.51.8 | 4 | - | 1.8V/2.5V/3.3V、3.2x2.5mm、高溫CMOS晶體振蕩器 | |
| HX322 | 標(biāo)準(zhǔn) | 25 ~ 100 | 3.2 x 2.5 x 1.0 | LVPECL | 3.32.5 | 6 | - | 2.5V/3.3V、3.2x2.5mm、高溫LVPECL晶體振蕩器 | |
| HX323 | 標(biāo)準(zhǔn) | 25 ~ 100 | 3.2 x 2.5 x 1.0 | LVDS | 3.32.5 | 6 | - | 2.5V/3.3V、3.2x2.5mm、高溫 LVDS 晶體振蕩器 | |
| HX501 | 標(biāo)準(zhǔn) | 25 ~ 100 | 5.0 x 3.2 x 1.2 | CMOS | 3.32.51.8 | 4 | - | 1.8V/2.5V/3.3V、5.0x3.2mm、高溫CMOS晶體振蕩器 | |
| HX502 | 標(biāo)準(zhǔn) | 25 ~ 100 | 5.0 x 3.2 x 1.2 | LVPECL | 3.32.5 | 6 | - | 2.5V/3.3V、5.0x3.2mm、高溫LVPECL晶體振蕩器 | |
| HX503 | 標(biāo)準(zhǔn) | 25 ~ 100 | 5.0 x 3.2 x 1.2 | LVDS | 3.32.5 | 6 | - | 2.5V/3.3V、5.0x3.2mm、高溫 LVDS 晶體振蕩器 | |
| HX701 | 標(biāo)準(zhǔn) | 25 ~ 100 | 7.0 x 5.0 x 1.4 | CMOS | 3.32.51.8 | 4 | - | 1.8V/2.5V/3.3V、7.0x5.0mm、高溫CMOS晶體振蕩器 | |
| HX702 | 標(biāo)準(zhǔn) | 25 ~ 100 | 7.0 x 5.0 x 1.4 | LVPECL | 3.32.5 | 6 | - | 2.5V/3.3V、7.0x5.0mm、高溫 LVPECL 晶體振蕩器 |
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此文關(guān)鍵字： CMOS輸出振蕩器
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